Nuclear Magnetic Resonance in a Ferromagnet-Semiconductor Heterostructure
نویسندگان
چکیده
We report the observation of nuclear magnetic resonance (NMR) in a ferromagnet-semiconductor heterostructure in the presence of a spin-polarized current. Spin-polarized electrons injected from a metallic ferromagnet generate a large nuclear spin population in a GaAs quantum well by dynamic polarization. The characteristic time for the polarization process is approximately 20 sec, and the nuclear polarization can persist for several minutes after the current is turned off. Resonant depolarization is observed in the presence of an AC magnetic field or when the injection current is modulated at the NMR frequency.
منابع مشابه
Potential barrier for spin-polarized electrons induced by the exchange interaction at the interface in the ferromagnet/semiconductor heterostructure.
We have calculated the exchange interaction between electrons in the accumulation electron layer in the semiconductor near the interface and electrons in the ferromagnet in the ferromagnet/semiconductor heterostructure. It is found that the exchange interaction forms the potential barrier for spin-polarized electrons. The barrier height strongly depends on the difference of chemical potentials ...
متن کاملTriplet Josephson effect with magnetic feedback in a superconductor-ferromagnet heterostructure.
We study the ac Josephson effect in a superconductor-ferromagnet heterostructure with a variable magnetic configuration. The system supports triplet proximity correlations whose dynamics is coupled to the magnetic dynamics. This feedback dramatically modifies the behavior of the junction. The current-phase relation becomes double periodic at both very low and high Josephson frequencies omegaJ. ...
متن کاملNUCLEAR MAGNETIC RESONANCE STUDY OF THE STRUCTURE OF GLYOXALDIHYDRAZONE
Study of the nuclear magnetic resonance spectra of glyoxaldihydrazone in dimethylsulfoxide and deuterochlorofonn leads to the conclusion that this compound exists predominantly in non-chelate structure
متن کاملDynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance.
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here ...
متن کاملComputational study of energetic, stability, and nuclear magnetic resonance of BN nanotube as a nanosensor
Now a day study on boron nitrid nanotubes are in considerable attetion due to their unique properties in different field of science. In this letter, after final optimization, thermodynamic properties analysis, stabilities, electronic structure and nuclear magnetic resonance parameters including σ isotropic and σ anisotropic tensors and asymmetric parameters of 15N and 11B nuclei are calculated....
متن کامل